Preparation and properties of a Cu---In alloy precursor for CuInSe2 films

We describe a new nonaqueous method to electrodeposit Cu---In alloy precursor for n-CuInSe₂ films. The structural and compositional analysis of the Cu---In alloy carried out by X-ray diffraction and X-ray photoelectron spectroscopy have also been discussed. The stoichiometry of the films has been found to be influenced by the deposition potential. It is shown that a Cu---In alloy precursor with bulk Cu/In ratio of 1.00 can be electrodeposited at a potential of −1.05 V (versus Pt). Flash annealing of the stacked Cu---In alloy/Se layers has been used to prepare CuInSe₂ films. It is shown that the flashed n-CuInSe₂ films have a chalcopyrite structure with strongly oriented (112) U planes.