AlN纳米线阵列的光学性质及第一原理计算

为了制备均匀的宏观AlN纳米线阵列,采用化学气相沉积法在二次模板上成功地合成了AlN纳米线宏观阵列.利用X射线衍射仪、扫描电子显微镜、电子能谱仪和紫外-可见光光度仪测试了AlN纳米线阵列的结构、形貌和紫外发光性能.结果表明,AlN纳米线阵列分布均匀,AlN纳米线的平均直径与平均长度分别约为41 nm和1. 8μm. AlN纳米线的分布密度约为5. 4×107mm-2,其覆盖率约为7. 1%. AlN纳米线在150～310 nm范围内具有很好的吸光性能.利用第一原理计算得到的AlN纳米线光学性质与实验结果相符.

Optical property and first-principle calculation of AlN nanowire array

In order to prepare the uniform macro AlN nanowire array, an AlN nanowire macro array was successfully synthesized on the secondary template with the chemical vapor deposition(CVD)method. The structure, morphology and ultraviolet photoluminescence properties of AlN nanowire array were investigated with X ray diffractometer(XRD), scanning electron microscope(SEM), electron energy disperse spectroscope(EDS)and UV-visible photometer(UVSP). The results show that the AlN nanowire array is uniformly distributed, and the average diameter and average length of AlN nanowires are 41 nm and 1.8 μm, respectively. In addition, the distribution density of AlN nanowires is 5.4×10⁷ mm^-2, and its coverage rate is 7.1%. The AlN nanowires have good light absorption properties in the range from 150 nm to 310 nm. The optical properties of AlN nanowires calculated by the first-principle method are consistent with the experimental results.