Temperature dependence of the microstructure and resistivity of indium zinc oxide films deposited by direct current magnetron reactive sputtering |
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Authors: | Do-Geun Kim Sunghun Lee Dong-Ho Kim Minoru Isshiki |
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Affiliation: | a Surface Technology Research Center, Korea Institute of Machinery and Materials (KIMM), 66, Sangnam-Dong, Changwon, Kyungnam, 641-010, South Korea b Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Aramaki, Aoba-Ku, Sendai 980-8577, Japan |
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Abstract: | Indium zinc oxide (IZO) films were deposited as a function of the deposition temperature using a sintered indium zinc oxide target (In2O3:ZnO = 90:10 wt.%) by direct current (DC) magnetron reactive sputtering method. The influence of the substrate temperature on the microstructure, surface roughness and electrical properties was studied. With increasing the temperature up to 200 °C, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about 3.4 × 10− 4 Ω cm. Change of structural properties according to the deposition temperature was also observed with X-ray diffraction patterns, transmission electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. IZO films deposited above 300 °C showed polycrystalline phases evolved on the amorphous IZO layer. Very flat surface roughness could be obtained at lower than 200 °C of the substrate temperature, while surface roughness of the films was increased due to the formation of grains over 300 °C. Consequently, high quality IZO films could be prepared by DC magnetron sputtering with O2/Ar of 0.03 and deposition temperature in range of 150-200 °C; a specific resistivity of 3.4 × 10− 4 Ω cm, and the values of peak to valley roughness and root-mean-square roughness are less than 4 nm and 0.5 nm, respectively. |
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Keywords: | 73 61 Le 68 55 Jk 73 60 -r 81 15 Cd |
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