|
|||||
|
|
Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire |
|
| Authors: | S Sun C Rice ZS Lee CW Huang ZC Feng |
| Affiliation: | a Structured Materials Industries, Inc. 201 Circle Drive N., Unit 102 and 103, Piscataway, NJ 08854, USA b School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore c Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC |
| Abstract: | A new type of large area metal organic chemical vapor deposition (MOCVD) system for the growth of high quality and large size ZnO materials is introduced. Materials properties of the un-doped, n- and p-doped ZnO epi-films grown on sapphire substrates by this MOCVD system are studied by various techniques, including high resolution X-ray diffraction (XRD), UV-Visible optical transmission (OT), photoluminescence (PL) and photoluminescence excitation (PLE), synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS). The wurtzite (w) ZnO crystal structures grown with primary (0002) orientation were identified. Results have shown the high crystalline quality of MOCVD-grown ZnO films, indicated by the narrow XRD, PL and Raman line widths, strong PL signals, sharp OT edge and smooth surface. In particular, high p-type carrier concentration of > 1017 cm− 3 have been achieved besides the good n-type doping in ZnO. |
| Keywords: | ZnO MOCVD X-ray diffraction Raman scattering Photoluminescence Synchrotron radiation |
| 本文献已被 ScienceDirect 等数据库收录！ | |