4H-SiC MOSFETs utilizing the H2 surface cleaningtechnique |
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Authors: | Ueno K Asai R Tsuji T |
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Affiliation: | Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka ; |
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Abstract: | The H2 cleaning technique was examined as the precleaning of the gate oxidation for 4H-SiC MOSFETs. The device had a channel width and length of 150 and 100 μm, fabricated on the p-type epitaxial layer of 3×1016 cm-3. The gate oxidation was performed after the conventional RCA cleaning, and H2 annealing at 1000°C. The obtained channel mobility depends on the pre-cleaning process strongly, and was achieved 20 cm2/N s in the H2 annealed sample. The effective interface-state density was also measured by the MOS capacitors fabricated on the same chips, resulting 1.8×1012 cm-2 from the photo-induced C-V method |
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