Ga_(0.47)In_(0.53)As材料液相外延生长的组分控制研究

本文分析了Ga_(0.47)In(0.53)As材料生长中影响材料组分变化的因素,简要地给出了生长合适组分外延层的料源配制公式及其应用结果.采用适当的生长工艺可使外延层的横向组分平均偏离控制在±1.0%以内,纵向组分平均偏离在±1.4%以内,一源多炉生长的炉间外延层组分的平均偏离在±2%以内.分凝系数测量结果说明:三元层的生长主要是与组分的扩散密切有关,而与生长界面的动力学因素关系不太紧密.

Study on Composition Control of Ga_(0.47)ln_(0.53)As Ternary Material Prepared by LPE Growth Method

The composition control in the growth of Ga0.47 In0.53 As ternary material and the effect of some factors on the material composition are analyzed. Simple formula is given for practical applications. A suitable growth technique makes average deviation of transverse composition to be controlled within ±1.0%, longitudinal deviation within ±1.4% and average composition deviation between runs with single source within ±2%. Measurement of distribution coefficient shows that ternary epilayer growth is mainly dependent on the composition diffusion not closely on the kinetics factors of the growth interface.