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Range profiles of Ar implanted into C films |
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| Affiliation: | 1. Institute of Informatics, Federal University of Goiás, Goiânia, Goiás, Brazil;2. Faculty of Science and Technology, Federal University of Goiás, Aparecida de Goiânia, Goiás, Brazil;3. Institute of Systems and Computer Engineering, Technology and Science (INESC TEC), Porto, Portugal;4. Department of Computer Science, Southern Oregon University, Ashland, Oregon, USA |
| Abstract: | 40Ar implants with energies ranging from 10–200 keV into C films were profiled using the Rutherford backscattering technique. The obtained projected range (Rp) and projected range stragglings (σp) are compared with recent range-energy calculations. The analysis shows that the experimental Rp and σp values are respectively on average 20% and 25% larger than the predicted ones. |
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