| Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices(Ⅰ) |
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| 作者姓名： | Genquan Han Shibing Long Yuhao Zhang Yibo Wang Zhongming Wei |
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| 作者单位： | 1. School of Microelectronics, Xidian University;2. School of Microelectronics, University of Science and Technology of China;3. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University;4. Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences;5. Institute of Semiconductors, Chinese Academy of Sciences |
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| 摘 要： | <正>There is currently great optimism within the electronics community that gallium oxide(Ga2O3) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga2O3 technology would offer an exciting platform to deliver massively enhanced device performance for power e...
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