The precise determination by NRA of the relative stoichiometry of silicon nitride thin films on heavy substrates |
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| Affiliation: | 1. Institute for Future Environments, Queensland University of Technology, Brisbane, QLD, 4000, Australia;2. Department of Plant Ecology (IFZ), Justus-Liebig University Giessen, Germany;3. School of Biology and Environmental Science, University College Dublin, Belfield, Dublin, Ireland;1. Department of Electronics and Communication Engineering, Medina Higher Institute for Engineering and Technology, Giza, Egypt;2. Department of Communications and Electronics, Alexandria Higher Institute for Engineering and Technology, Alexandria, Egypt;3. Department of Electronics and Communications Engineering, Faculty of Electronic Engineering, Menoufia University, Menouf 32952, Egypt;4. Department of Communications and Electronics, Faculty of Engineering, Minia University, Minia 61111, Egypt;1. Key Laboratory of Catalysis and Materials Science of the State Ethnic Affairs Commission & Ministry of Education, Hubei Province, South-Central University for Nationalities, Wuhan, Hubei, 430074, China;2. Key Laboratory for Green Chemical Process of Ministry of Education, Wuhan Institute of Technology, Wuhan, Hubei 430073, China;3. CSIRO Manufacturing, 75 Pigdons Road, Waurn Ponds, Victoria 3216, Australia |
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| Abstract: | A method has been developed for measuring the relative stoichiometry of silicon nitride films less than 3000 Å thick on heavy substrates. By using (d, p) reactions and a single particle detector, a precision of ± 2% in the relative stoichiometry can be obtained without standards, charge integration or knowledge of the detector solid angle. Measurement of the absolute stoichiometry is dependent on the availability of a suitable standard. An application of this method to a study of the properties of magnetron sputtered Si3N4 thin films on GaAs is described. |
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