Recent studies of thin films and surfaces by high-Resolution electron microscopy |
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| Authors: | David J Smith Rob W Glaisher Z G Li Ping Lu M R McCartney S C Y Tsen A K Datye |
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| Affiliation: | (1) Center for Solid State Science, Arizona State University, 85287-1704 Tempe, AZ;(2) Electron Microscope Unit, University of Sydney, 2006 Sydney, New South Wales, Australia;(3) E.I. Du Pont de Nemours, Inc., Wilmington, DE;(4) Department of Mechanics and Materials Science, Rutgers-The State University, 08855 Piscataway, NJ;(5) Department of Chemical and Nuclear Engineering, University of New Mexico, 87131 Albuquerque, NM |
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| Abstract: | The technique of high-resolution electron microscopy represents a powerful method for characterizing the microstructure of
thin films and surfaces. We demonstrate its usefulness by reference to some recent studies of metals, semiconductors, and
oxides, in particular, showing that it can be used to follow physical and chemical changes inducedin situ by the electron beam orex situ as a result of annealing or chemical treatment.
This invited critical overview paper is based on a presentation made in the symposium “Structure and Properties of Fine and
Ultrafine Particles, Surfaces and Interfaces” presented as part of the 1989 Fall Meeting of TMS, October 1–5, 1989, in Indianapolis,
IN, under the auspices of the Structures Committee of ASM/MSD. |
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