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室温辐射探测器用碲锌镉晶体的退火改性研究进展
引用本文:陈永仁,赵鹏,俞鹏飞,刘文斐,芦晗越,王蕾,高力,郑丹. 室温辐射探测器用碲锌镉晶体的退火改性研究进展[J]. 材料科学与工程学报, 2021, 39(2): 342-354. DOI: 10.14136/j.cnki.issn1673-2812.2021.02.029
作者姓名:陈永仁  赵鹏  俞鹏飞  刘文斐  芦晗越  王蕾  高力  郑丹
作者单位:长安大学 材料科学与工程学院,陕西 西安 710064
基金项目:国家自然科学基金资助项目;陕西省科技厅资助项目
摘    要:碲锌镉(CdZnTe)作为一种重要的Ⅱ-VI族化合物半导体,因其具备优异的光电性能,成为制备室温辐射探测器的理想材料.但生长态的CdZnTe晶体中不可避免地会引入Cd空位、沉淀/夹杂相、杂质和位错等缺陷,严重影响了所制备器件的质量和光电性能.因此,需对生长态晶体进行退火改性处理以提高晶体的质量.本文分析了CdZnTe材...

关 键 词:室温辐射探测器  碲锌镉  缺陷  退火改性  晶体质量

Research Progress on Annealing of CdZnTe Crystals Used for Room Temperature Radiation Detectors
CHEN Yongren,ZHAO Peng,YU Pengfei,LIU Wenfei,LU Hanyue,WANG Lei,GAO Li,ZHENG Dan. Research Progress on Annealing of CdZnTe Crystals Used for Room Temperature Radiation Detectors[J]. Journal of Materials Science and Engineering, 2021, 39(2): 342-354. DOI: 10.14136/j.cnki.issn1673-2812.2021.02.029
Authors:CHEN Yongren  ZHAO Peng  YU Pengfei  LIU Wenfei  LU Hanyue  WANG Lei  GAO Li  ZHENG Dan
Affiliation:(School of Materials Science and Engineering,Chang'an University,Xi'an 710064,China)
Abstract:Cadmium zinc telluride(CdZnTe)is an important Ⅱ-Ⅵ compound semiconductor.It is an ideal material for room temperature radiation detectors due to its excellent opto-electrical properties.However,defects such as Cd vacancies,precipitate/inclusion phases,impurities and dislocations inevitably exist in asgrowth CdZnTe crystals.These defects seriously influence the quality and opto-electrical performance of the fabricated devices.Therefore,the properties of as-grown crystals need to be improved by annealing.The main defects in CdZnTe were analysed in this paper.The research progress of annealing processes such as annealing temperature,annealing time,annealing atmosphere and annealing method on the crystal quality and detector performance of CdZnTe was particularly reviewed.
Keywords:Room temperature radiation detector  CdZnTe  Defects  Annealing  Crystal quality
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