Ion-beam-defect processes in group-III nitrides and ZnO |
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Authors: | S.O. Kucheyev J.S. Williams |
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Affiliation: | a Lawrence Livermore National Laboratory, Livermore, CA 94550, USA b Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia |
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Abstract: | Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of ion-beam-produced planar defects in GaN, (iii) defect production in GaN by swift heavy ions, (iv) blistering of H-implanted GaN, (v) electrical isolation of GaN and ZnO, (vi) the effect of Al and In content on defect processes in III-nitrides, and (vii) structural damage in ZnO with an intriguing effect of the formation of an anomalous defect peak. Emphasis is given to unusual ion-beam-defect processes and to the physical mechanisms underlying them. |
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Keywords: | 61.72.Cc 61.72.Dd 68.55.Ln 61.72.Vv |
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