Inspection of intermediate stress-induced electronic traps in Si/Al2O3 system |
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Authors: | ZQ Ma Q Zhang |
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Affiliation: | a Department of Physics, Shanghai University, Shangda Road 99, Shanghai 200436, PR China b Department of Chemistry, Shanghai University, Shanghai 200436, PR China c Department of Physics, Ritsumeikan University, Kusatsu, Shiga-ken 525-77, Japan |
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Abstract: | The physical characteristics of device-grade thin silicon film at (1 0 0) grown on α-Al2O3 substrate using the chemical vapour deposition (CVD) technique has been studied in this paper. Its thickness, crystalline structure, elemental inter-diffusion in the interface region and the quality were characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), core level X-ray photoelectron spectroscopy (XPS) and nuclear resonance reaction 27Al(p,γ)28Si, respectively. The results of stoichiometric defect profile and individual silicon suboxide (such as SiO, and Si2O3 components with respect to the metallic Si element) formation in the intermediate region were observed. The deep traps located around Ec=0.26eV, in ∼500 nm thick n-type Si films, were attributed to the defects caused by the strain of the silicon lattice. Raman spectroscopy was used to evaluate the compressive stress in the Si film. |
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Keywords: | Silicon on sapphire XPS RBS Raman spectrum Interface trap Film stress |
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