Characteristics of NixFe100−x films deposited on SiO2/Si(1 0 0) by DC magnetron co-sputtering |
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Authors: | Xiaobai Chen Hong Qiu Hao Qian Fengping Wang Liqing Pan Yue Tian |
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Affiliation: | a Department of Physics, School of Applied Science, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, Chinab Beijing Technology and Business University, Beijing 100037, Chinac Beijing Keda-Tianyu Microelectronic Material Technology Development Co. Ltd, 30 Xueyuan Road, Haidian District, Beijing 100083, China |
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Abstract: | NixFe100−x films with a thickness of about 200 nm were deposited on SiO2/Si(1 0 0) substrates at room temperature by DC magnetron co-sputtering using both Fe and Ni80Fe20 targets. Compositional, structural, electrical and magnetic properties of the films were investigated. Ni76Fe24, Ni65Fe35, Ni60Fe40, Ni55Fe45, Ni49Fe51 films are obtained by increasing the sputtering power of the Fe target. All the films have a fcc structure. Ni76Fe24, Ni65Fe35, Ni60Fe40 and Ni55Fe45 films grow with crystalline orientations of 1 1 1] and 2 2 0] in the direction of the film growth while the Ni49Fe51 film has the 1 1 1] texture structure in the direction of the film growth. The lattice constant of the film increases linearly with increasing Fe content. All of the films grow with thin columnar grains and have void networks in the grain boundaries. The grain size does not change markedly with the composition of the film. The resistivity of the film increases with increasing Fe content and is one order of magnitude larger than that of the bulk. For all the films the magnetic hysteresis loop shows a hard magnetization. The Ni76Fe24 film has the lowest saturation magnetization of 6.75×10−2 T and the lowest saturation field of 8.36×104 A/m while the Ni49Fe51 film has a largest saturation magnetization of 9.25×10−2 T and the largest saturation field of 1.43×105 A/m. |
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Keywords: | NixFe100&minus x film Co-sputtering Composition Structure Resistivity Magnetization |
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