Effect of gas mixing ratio on gas-phase composition and etch rate in an inductively coupled CF4/Ar plasma

In this work, we carried out investigations aimed at understanding the effect of gas mixing ratio on plasma parameters, gas phase composition and etch rate in CF₄/Ar inductively coupled plasma. For this purpose, a combination of experimental methods and modelling was used. Experiments showed that electron temperature and electron density are not very sensitive to variations of Ar content in CF₄/Ar plasma. From a zero-dimensional plasma model, the densities of both neutral and charged particles change monotonically. The analysis of surface kinetics based on an ion-assisted etching mechanism showed the possibility of non-monotonic etch rate behaviour due to a concurrence of chemical and physical etching pathways.