Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H Films |
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Authors: | Wei Wensheng Wang Tianmin Li Guohua Ding Kun |
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Affiliation: | a Center of Material Physics & Chemistry, School of Science, Beihang University (BUAA), Beijing 100083, Chinab Institute of Opto-electronics Technology, Beihang University (BUAA), Beijing 100083, Chinac National Laboratory For Semiconductor Superlattice & Microstructure, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China |
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Abstract: | Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2θ≈47° and the exponent of crystalline plane of nc-Si in the film was (2 2 0). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. |
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Keywords: | Hydrogenated nanocrystalline silicon film Boron-doped Nanocrystalline silicon Preferred growth Electric field |
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