Preparation of amorphous Si3N4-C plate by chemical vapour deposition |
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Authors: | Toshio Hirai Takashi Goto |
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Affiliation: | (1) The Research Institute for Iron, Steel and Other Metals, Tohoku University, 980 Sendai, Japan |
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Abstract: | Chemical vapour deposition of a Si-N-C system has been studied by using SiCl4, NH3, H2 and C3H8 as source gases at deposition temperatures (Tdep) of 1100 to 1600° C, and total gas pressures (Ptot) of 30 to 100 torr. To control the amount of carbon in these deposits the propane gas flow rate [FR(C3H8)] was varied from 0 to 200 cm3 min–1. Homogeneous plate-like amorphous deposits were successfully prepared atTdep=1100 to 1300° C,Ptot=30 to 70 torr andFR(C3H8)=25 to 100 cm3 min–1. The deposits were composed of amorphous silicon nitride and carbon and the carbon content increased up to 10 wt% with increasingFR(C3H8). The surfaces of the deposits had a pebble-like structure. |
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