硅微通道板像增强器的研究

微通道板作为电子倍增器件可以对电子、离子、紫外和软X射线进行探测和成像.传统微通道板制备是采用玻璃纤维拉制和氢还原等技术,提出分别采用半导体体微加工和电化学腐蚀制备硅微通道板的新技术.在干法刻蚀中采用 ICP 技术制备了孔径为 6～20 μm、间隔4～8 μm、长径比 15～30 的硅微通道板,初步试验结果为对于长径比为 16 的样品,电子增益为 102 数量级.同时,开展了湿法电化学腐蚀技术制作硅微通道板的研究,分析讨论了电化学腐蚀微通道板的机理.结果表明,干法和湿法刻蚀技术可以制备高长径比硅微通道板,与 ICP 技术型比,电化学腐蚀具有较低的成本.

Study on Silicon Microchannel Plate Image Intensifier

Microchannel plate (MCP) is an image intensifier widely used for detecting and imaging of the e-lectrons, ions, UV radiation, and soft X-ray fluxes. The traditional preparation of MCP is a process of glass fiber drawing and hydrogen reduction. A new method for fabricating MCP was proposed and studied.A silicon MCP was prepared based on bulk-micromachining technology, dry etching technology and elec-trochemical process respectively. In dry etching, a Si-MCP with 15-30 aspect ratio of the microchannel,6～20 μm dimension of pore, 4～8 μm space were prepared by Inductively Coupled Plasma (ICP). The e-lectron gain for the sample of aspect ratio of 16 was about 102. In wet process, both p-type and n-type sili-con was selected as the substrate for MCP. The electrochemical mechanism of silicon anisotropy etching were investigated and discussed. The results shows that the high aspect ratio of silicon microchannel arrays can be made by both dry and wet etching processes. The electrochemical process for silicon microchannel arrays has lower cost than ICP process.