Sub-threshold leakage currents in weakly inverted short channel IGFETS

This paper attempts to develop a comprehensive device model suitable for computer aided design, in the sub-threshold mode of operation, for short-channel insulated-gate field-effect transistors (IGFETs). It is shown that, for state-of-the art MOS LSI, employing 4–6 μ channel length devices, the sub-threshold conduction current is influenced by the longitudinal electric field to a significant degree. The device model is found to be in close agreement with experimental data. The limitations of this model for very short channel IGFETs is briefly discussed.