Effects of the operational modes on the temperature dependence of the Gunn diode admittance

the analytical expressions for the large-signal admittances of Gunn diodes including the temperature dependence have been derived theoretically for the quenched- and delayed-domain modes by using a piece-wise linear approximation for the velocity-field characteristic. As the main physical parameters affecting the temperature dependence of the Gunn diode admittance, the following have been considered; the domain transit time, the domain formation time, the domain extinction time, the low-field mobility and the dielectric constant. The analysis shows that the diode conductance decreases with increasing microwave voltage and temperature for both the quenched- and delayed-domain modes, whereas the dependence of the diode susceptance on the microwave voltage and temperature is different between the two modes. This difference is explained by the temperature dependence of the domain transit time, the domain formation time, and the low-field mobility. The variation of oscillation frequency due to the change of the diode admittance has also been discussed.