Effects of nitrogen annealing on electron scatterings in SiSiO2 interface |
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Authors: | A. Yagi S. Kawaji |
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Affiliation: | 1. Sony Research Center 174, Fujitsukacho Hodogaya-ku, Yokohama 240, Japan;2. Department of Physics, Gakushuin University, Mejiro Toshima-ku, Tokyo 171, Japan |
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Abstract: | The effective mobility of electrons at Si (100) surfaces was measured as a function of electron density Ns = 5 × 1011?1 × 1013 cm?2 at 4.2K for samples with and without annealing (10 min–2 hr) in nitrogen gas at 1000°C after wet thermal oxidation. A great part of the scattering by Coulomb and short-range potentials was reduced by a short (~10 min) anneal time, although the subsequent annealing resulted in a slight increase in the number of the scatterers. On the other hand, scattering by a surface roughness potential was reduced with increase in the anneal time. These scattering effects associated with N2 annealing are discussed. |
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