SiSiO2 interface state spectroscopy using MOS tunneling structures

This paper provides a critical review and classification of the studies of SiSiO₂ interface state parameters and energy distributions by means of MOS tunneling in structures with ultrathin SiO₂ layers (10–100 Å). Suggestions are made of experiments that will help to elucidate the importance of materials and processing conditions on these states, and to separate the various mechanisms involving charge exchange with the metal, the conduction band, and the valence band of the semiconductor.