Native levels and degradation in GaAs0.6P0.4 LEDs |
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| Authors: | C López A García F García E Muñoz |
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| Affiliation: | Escuela Técnica Superior de Ingenieros de Telecomunicación, Universidad Politécnica, Ciudad Universitaria, Madrid, 3, Spain |
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| Abstract: | The native level structure in Te-doped GaAs0.6P0.4 LED's has been studied by transient capacitance techniques. The presence of deep electron traps at 0.56 and 0.38 eV below the conduction band, and hole traps at 0.65 and 0.41 eV above the valence band has been shown. Several shallow levels and a residual IR emission are also present. Forward bias degradation has been investigated and related to the native level and IR radiation evolution. |
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