A new integrated voltage-controlled negative resistance device-Lambda MOSFET |
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| Authors: | Ching-Yuan Wu Khun-Nan Lai |
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| Affiliation: | Semiconductor Research Center and Institute of Electronics, College of Engineering, National Chiao-Tung University, Hsinchu, Taiwan, Rep. of China |
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| Abstract: | A new Λ-type voltage-controlled negative resistance device called the “Lambda MOSFET” is presented, which consists of three integrated n(p)-channel enhancement mode metal-oxide-silicon field effect transistors. The main integrated circuit construction of the Lambda MOSFET is to connect an inverter of the n(p)-channel enhancement mode MOSFET with load operated at the saturation region (NELS) and a n(p)-MOS driver, which can be easily fabricated by existing planar MOSFET technologies. The operational principles and the characteristics of the proposed new device are discussed. |
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