Minority carrier lifetimes in silicon solar cells determined from spectral and transient measurements |
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Authors: | HT Weaver RD Nasby |
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Affiliation: | Sandia Laboratories, Albuquerque, NM 87115, U.S.A. |
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Abstract: | Measurements of the spectral collection efficiency and short circuit current decay rate following an X-ray pulse have been made on three types of single crystal silicon solar cells. The cell types were n+ - p, p+ - n, and p+ - n - n+ with base resistivities of 0.3, 10 and 10 Ω-cm, respectively. Minority carrier lifetimes were determined from both experiments using analytical or device code calculations, as required. For the n+ - p and p+ - n cells, nominal lifetimes of 2 and 5 ωsec, respectively, were obtained. A lifetime greater than 100 ωsec was inferred for the p+ - n - n+ device. This value represents a minimum estimate since our analysis is inaccurate when the diffusion length exceeds the cell thickness, as is the case here. The difference in base lifetime for the p+ - n and p+ - n - n+ structures is attributed to gettering during the phosphorus diffusion to form the back surface field layer. |
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