pn Junction applications and transport properties in polysilicon rods |
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| Authors: | A. Criado E. Calleja J. Martinez J. Piqueras E. Muñoz |
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| Affiliation: | Laboratorio de Semiconductores and Instituto de Física del Estado Sólido (C.S.I.C.), Universidad Autónoma de Madrid, Canto Blanco, Madrid, Spain |
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| Abstract: | B-Doped polysilicon rods have been studied through their crystalline structure and electronic transport properties. P Diffusion data and the properties of the p-n junctions obtained are also discussed. Avalanche current distribution and reverse bias electric field spikes have been carefully studied.It is concluded that this material is quite suitable for low-cost solar cell applications, and, from preliminary experiments, could be of interest for power transient suppressors. |
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