Effect of substrate generation current on oxide I-V measurement on p-type MOS structures |
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| Authors: | Han-Sheng Lee |
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| Affiliation: | Electronics Department, General Motors Research Laboratories, Warren, MI 48090, U.S.A. |
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| Abstract: | The values of the bulk generation current and surface generation current extracted from slow ramp I-V and C-V measurements of p-type substrate MOS capacitors are found to be consistent with the results from transient capacitance measurement. The shape of the I-V curve for high positive gate biases is found to depend on the formation of a deep depletion region in the p-type substrate. |
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