Characteristics of an aluminum-germanium photovoltaic cell |
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| Authors: | PA Chen |
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| Affiliation: | Chung Shan Institute of Science and Technology, P.O. Box No. 1-3-7, Lung-Tan, Taiwan 325 |
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| Abstract: | Aluminum n-type germanium Schottky barrier photovoltaic cells with response in the medium IR range have been developed. Using a low temperature process, Al is sputtered onto Ge to form a barrier contact; a special arrangement of the top electrode has been used for enhancement the long wavelength photon absorptio. I–V characteristics, spectral response and 4He ion backscattering data of the device are presented. |
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