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Dislocation Loops in Pressureless-Sintered Undoped BaTiO3 Ceramics
Authors:Yu-Chuan Wu  Ching-Ying Chen  Hong-Yang Lu  Daniel E. Mc Cauley   Mike S.H. Chu
Affiliation:Centre for Nanoscience, Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan; Ferro Electronic Materials System, Penn Yan, New York 14527
Abstract:Dislocation loops in pressureless-sintered undoped BaTiO3 ceramics have been analyzed by transmission electron microscopy. The Burgers vector of the loops and its sense b =+1/2[010] were determined using the g·b =0 invisibility criteria, combined with the inside–outside contrast technique using ( g·b ) s g >0 or<0, keeping the deviation parameter s g >0. The edge-vacancy nature was further ascertained by determining the loop habit plane normal n =[0 1 0]. Weak-beam dark-field imaging reveals that loops contained no stacking fault fringes; they are edge-vacancy partial dislocation loops lying in {020} or {010} where parts of the TiO2 or BaO layer are vacant. It is suggested that the extrinsic defects of both cations and oxygen vacancies generated by non-stoichiometry have condensed during sintering in air and are responsible for the formation of such vacancy loops.
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