1.3 /spl mu/m InGaAsN vertical cavity surface emitting lasers grown by MOCVD |
| |
| Authors: | Takeuchi T. Chang Y.-L. Leary M. Tandon A. Luan H.-C. Bour D. Corzine S. Twist R. Tan M. |
| |
| Affiliation: | Agilent Technol. Labs., Palo Alto, CA; |
| |
| Abstract: | The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 /spl mu/m are reported. The devices were of conventional p-i-n structure with doped DBR mirrors. CW lasing up to 65/spl deg/C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for single-mode devices. |
| |
| Keywords: | |
|
