Preparation of thermoelectric materials based on higher manganese silicide

Rhenium-doped higher manganese silicide based materials have been prepared by hot pressing. It has been shown that the pressing temperature of the materials can be lowered by adding titanium as a reductant or by sonication during pressing. The average thermoelectric figure of merit of the materials in the temperature range 600–900 K is Z ≅ 0.7 × 10⁻³ K⁻¹.