Fabrication of a plane-parallel interface in Ni/PbZr0.2Ti0.8O3 heterostructures |
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| Authors: | A. I. Stognij N. N. Novitskii S. A. Sharko A. V. Bespalov O. L. Golikova V. A. Ketsko |
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| Affiliation: | 1.Scientific-Practical Materials Research Centre,Belarussian Academy of Sciences,Minsk,Belarus;2.Moscow State Technical University of Radio Engineering, Electronics, and Automation,Moscow,Russia;3.Kurnakov Institute of General and Inorganic Chemistry,Russian Academy of Sciences,Moscow,Russia |
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| Abstract: | A process has been proposed for producing a plane-parallel ferromagnetic/ferroelectric interface, which ensures a reproducible magnetoelectric performance of Ni/PbZr0.2Ti0.8O3 (PZT) heterostructures. Its principle is to smooth the initial surface profile of the PZT ceramic substrate to a submicron level by sequential deposition/sputtering of three layers 0.2, 0.1, and 0.05 μm in thickness through ion beam sputtering of a target having the same composition as the substrate, followed by the growth of a nickel film on the smoothed surface. This allows one to preclude film bulging and spalling and ensures high quality of the interface. |
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