| RF LDMOS功率晶体管及其应用 |
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| 引用本文： | 云振新,戴洪波. RF LDMOS功率晶体管及其应用[J]. 微纳电子技术, 2001, 38(3): 16-20 |
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| 作者姓名： | 云振新 戴洪波 |
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| 作者单位： | 1. 国营970厂,四川,成都,610051
2. 电子十三所,河北,石家庄,050051 |
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| 摘 要： | 论述了 RF LDMOS功率晶体管的基本结构和特点。从与双极晶体管相比较的角度 ,讨论了这种器件的优异性能。对其发展动态和应用情况作了介绍。
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| 关 键 词： | 横向扩散金属-氧化物-半导体场效应晶体管 移动通信 机载应答器 广播电视发射机 |
| 文章编号： | 1001-5507(2001)03-0016-05 |
| 修稿时间： | 2001-02-12 |
RF LDMOS power transistor and its applications |
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| YUN Zhen-xin ,DAI Hong-bo. RF LDMOS power transistor and its applications[J]. Micronanoelectronic Technology, 2001, 38(3): 16-20 |
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| Authors: | YUN Zhen-xin DAI Hong-bo |
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| Affiliation: | YUN Zhen-xin 1,DAI Hong-bo 2 |
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| Abstract: | The basic structure and main characteristics of RF LDMOS power transistor are described.In comparing this device to bipolar transistors,the inherent device advantages are presented.Its developments and applications are also introduced. |
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| Keywords: | LDMOSFET mobile communication avionics transponder broadcast television transmitter |
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