Enhanced resistance in Bi(Fe1-xScx)O3-0.3BaTiO3 lead-free piezoelectric ceramics: Facile analysis and reduction of oxygen vacancy

We reported a facile analysis and reduction of oxygen vacancy (${\mathrm{V}}_{\mathrm{O}}^{??}$) in 0.7Bi(Fe_1-xSc_x)O₃-0.3BaTiO₃ (0≤x≤0.08) ceramics. The leakage current mechanism was investigated intensively. Our results indicated that oxygen vacancies are the main cause for the high conductivity in BF-BT ceramics, and their concentration was quantitatively estimated from the Bi³⁺ content and the average oxidation state of iron. The ${\mathrm{V}}_{\mathrm{O}}^{??}$ concentration was effectively suppressed and the insulation resistance was enhanced by almost two orders of magnitude after doping 2%mol Sc³⁺. The enhanced insulation resistance contributed to excellent piezoelectric properties with d₃₃ = 165 pC/N, T_C = 505 °C, and k_p = 26%. The proposed analysis method used to quantify the ${\mathrm{V}}_{\mathrm{O}}^{??}$ concentration provides valuable indications to reduce the leakage current density and improve the piezoelectric properties of BF-BT based ceramic.