| P型Si上Ni—Pd薄膜的电沉积及界面硅化物的研究 |
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| 引用本文： | 刘冰 龚正烈. P型Si上Ni—Pd薄膜的电沉积及界面硅化物的研究[J]. 电镀与精饰, 1998, 20(2): 1-4 |
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| 作者姓名： | 刘冰 龚正烈 |
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| 作者单位： | [1]天津大学应用化学系 [2]天津理工大学 |
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| 摘 要： | 采用控电位沉积方式在ｐ－Ｓｉ上制备了Ｎｉ－Ｐｄ合金薄膜,考察了阴极沉积行为,研究了电沉积条件对膜组成的影响,并探讨了膜组成与结构的关系,ＸＲＤ测试表明Ｎｉ－Ｐｄ合金呈面心立方的固溶本结构,其晶面间距随合金组成不同而变化,ＸＰＳ研究表明,Ｐｄ与硅之间存在着较强的常温扩散并形成了硅化物。
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| 关 键 词： | 镍钯合金 电沉积 P型硅 电镀 镀合金 半导体 |
Study of Electrodeposition of Ni Pd Film on p Si and Formation of Metal Silicide on the Interface |
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| Liu Bing,Zhang Guoqing,Yao Suwei,Guo Hetong. Study of Electrodeposition of Ni Pd Film on p Si and Formation of Metal Silicide on the Interface[J]. Plating & Finishing, 1998, 20(2): 1-4 |
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| Authors: | Liu Bing Zhang Guoqing Yao Suwei Guo Hetong |
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| Abstract: | Nickel Palladium alloy film on p Si was prepared using potential controlled electrodeposion. Cathodic deposition behavior was investigated. The effect of operation conditions on film composition was studied, and the relationship between the film composition and structure was investigated. XRD indicates that Ni Pd film is a solid solution with face centered cubic structure, and the distance between crystal planes changes with the composition of Ni, Pd in deposit. XPS suggests that dramatic interdiffusion between Ni, Pd and Si has occurred at ambient temperature and metal silicides are formed at the interface. |
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| Keywords: | nickel palladium alloy electrodeposition p silicon silicide |
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