Silicon-nanowire transistors with intruded nickel-silicide contacts |
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Authors: | Weber Walter M Geelhaar Lutz Graham Andrew P Unger Eugen Duesberg Georg S Liebau Maik Pamler Werner Chèze Caroline Riechert Henning Lugli Paolo Kreupl Franz |
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Affiliation: | Qimonda Dresden GmbH & Co., Technology Center, D-01099 Dresden, Germany. walter.weber@qimonda.com |
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Abstract: | Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm. |
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