| GaInAs／AlInAs调制掺杂结构材料的光学性质研究 |
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| 引用本文： | 江德生 张永航. GaInAs／AlInAs调制掺杂结构材料的光学性质研究[J]. 固体电子学研究与进展, 1996, 16(2): 121-125 |
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| 作者姓名： | 江德生 张永航 |
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| 作者单位： | 超晶格国家重点实验室，中国科学院半导体研究所 |
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| 摘 要： | 研究了ＧａＩｎＡｓ／ＡｌＩｎＡｓｎ型调制掺杂结构样品的光致发光及其激发光谱。当空穴态被局域化后．二维电子气的发光线形反映了导带二维态密度的填充效应：导带两个子带填充电子。发光强度则表明，导带第二子带电子波函数在空间上更扩展，与空间分离的空穴产生发光复合的几率较大。激发光谱提供了样品中异质结结构直接带边附近光吸收过程的信息。
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| 关 键 词： | 调制掺杂结构，GaInAs／AlInAs，光学性质 |
The Investigations of Optical Properties of GaInAs/AlInAs Modulation Heterostructures |
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| Jiang Desheng, Liu Wei, Zhang Yaohui. The Investigations of Optical Properties of GaInAs/AlInAs Modulation Heterostructures[J]. Research & Progress of Solid State Electronics, 1996, 16(2): 121-125 |
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| Authors: | Jiang Desheng Liu Wei Zhang Yaohui |
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| Abstract: | The photoluminescence (PL) and PL excitation spectra of GaInAs/AlInAs modulation-doped heterostructures are investigated. The luminescence lineshape reflects the filling effect of 2-dimensional density of states when the hole states are localized, indicating that the two subbands in the conduction band are occupied by electrons. The luminescence intensity shows that the probability of radiative recombinations with spatially-separated holes is stronger for the electrons in the second subband than for those in the first subband due to the more extended distribution of the wave fuction of the second subband. The PL excitation spectra provide information of the optical absorption processes occured near the direct bandgap of heterostructures in the samples. |
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| Keywords: | Modulation-Doped Structures GaInAs/AlInAs Optical Properties |
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