| 长波HgCdTe光导探测器液氮温度电阻和室温电阻比值计算 |
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| 引用本文： | 蔡毅 姚英. 长波HgCdTe光导探测器液氮温度电阻和室温电阻比值计算[J]. 红外技术, 1997, 19(2): 1-2 |
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| 作者姓名： | 蔡毅 姚英 |
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| 作者单位： | 昆明物理研究所 |
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| 摘 要： | 研究了长波ＨｇＣｄＴｅ光导探测器液搂温度电阻和室温电阻比值计算问题。结果表明：制成器件后，表面导导，材料电导率的变化和背景辐射都将使器件液氮温度的电阻减小，进行这三项修正后，器件电阻比值的计算值与实验值吻合。
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| 关 键 词： | 光导探测器 器件电阻 碲镉汞 液氮温度电阻 |
Calculation of the Ratio of LWIR HgCdTe Photoconductive Detector Resistance at Room and Liquid nitrogen Temperatures |
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| Cai yi,Yao Ying,Liang Hongling. Calculation of the Ratio of LWIR HgCdTe Photoconductive Detector Resistance at Room and Liquid nitrogen Temperatures[J]. Infrared Technology, 1997, 19(2): 1-2 |
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| Authors: | Cai yi Yao Ying Liang Hongling |
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| Abstract: | The ratio of LWIR HgCdTe photoconductive detector resistance at room and liquid-nitrogen temperatures is calculated The result shows that the surface conduction,material conductivity changes,and background radiation have influence on the detector resistance at liquid-nitrogen temperature Calculation dataa grees with experimental results after having taken into account of these factors |
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| Keywords: | HgCdTe Photoconductive detectors Device resistance |
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