| 同质缓冲层厚度对掺铝氧化锌薄膜性能的影响 |
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| 引用本文： | 杨斌,王连杰,张平,宋淑梅,杨田林.同质缓冲层厚度对掺铝氧化锌薄膜性能的影响[J].电子元件与材料,2010,29(1). |
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| 作者姓名： | 杨斌 王连杰 张平 宋淑梅 杨田林 |
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| 作者单位： | 山东大学威海分校,空间科学与物理学院,山东,威海,264209 |
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| 基金项目： | 国家自然科学基金资助项目(No.60676041);;山东省自然科学基金资助项目(No.Y2008A37) |
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| 摘 要： | 室温下,采用射频磁控溅射法在玻璃衬底上制备具有同质缓冲层的ZnO∶Al(AZO)薄膜。用X射线衍射仪、紫外-可见分光光度计、四探针探测仪等对薄膜的结构和光电性能进行了研究。结果表明:当薄膜总厚度为400 nm时,制备具有66 nm同质缓冲层的AZO薄膜的方块电阻为26Ω.□–1,与单层AZO(400 nm)薄膜的方块电阻(63Ω.□–1)相比,下降了59%,其在可见光范围内的平均透过率为91%。
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| 关 键 词： | AZO 同质缓冲层 厚度 方块电阻 透过率 |
Effect of homo-buffer layer thickness on the properties of Al-doped ZnO films |
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| YANG Bin,WANG Lianjie,ZHANG Ping,SONG Shumei,YANG Tianlin.Effect of homo-buffer layer thickness on the properties of Al-doped ZnO films[J].Electronic Components & Materials,2010,29(1). |
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| Authors: | YANG Bin WANG Lianjie ZHANG Ping SONG Shumei YANG Tianlin |
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| Affiliation: | School of Space Science and Physics;Shandong University at Weihai;Weihai 264209;Shandong Province;China |
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| Abstract: | Al-doped zinc oxide (AZO) films with homo-buffer layer were deposited by RF magnetron sputtering on glass substrates at room temperature.The opto electronic properties and structure of films were analyzed by using X-ray diffraction instrument,etc.The results show that the AZO(400 nm) film without buffer layer has a sheet resistance of 63 Ω·□~(-1),and the glass/AZO (66 nm)/AZO(334 nm) film shows a sheet resistance of 26 Ω·□~(-1) and an average transmittance of 91% in the visible range.Comparing with AZO film without buffer layer,the AZO film with homo-buffer layer of 66 nm decreases by 59% in sheet resistance. |
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| Keywords: | AZO homo-buffer layer thickness sheet resistance transmittance |
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