|
|||||
|
|
Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3 |
|
| Authors: | Tamotsu Okamoto Makoto Konagai Nobuaki Kojima Akira Yamada Kiyoshi Takahashi Yoshio Nakamura Osamu Nittono |
| Affiliation: | (1) Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, 152 Tokyo, Japan;(2) Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, 152 Tokyo, Japan;(3) Department of Metallurgical Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, 152 Tokyo, Japan |
| Abstract: | The structural and optical properties of Ga2Se3 on (100)GaP and (100)GaAs prepared by molecular beam epitaxy have been investigated. The electron diffraction studies revealed that the superstructure was formed in [011] direction by the spontaneous ordering of native gallium-vacancies in the defect zinc blende structure under a selenium-rich growth condition, and very large absorption anisotropy (Δα>104cm1) was observed in the vacancy-ordered Ga2Se3. Furthermore, polarization dependence of photoconductivity due to the absorption anisotropy was observed in the vacancy-ordered Ga2Se3 on (100)GaAs. |
| Keywords: | Ga2Se3 defect zinc blende structure Group III-VI compounds opitcal anisotropy vacancy ordering |
| 本文献已被 SpringerLink 等数据库收录！ | |