Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency |
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Authors: | Jutta Kühn Friedbert van Raay Rüdiger Quay Rudolf Kiefer Michael Mikulla Matthias Seelmann-Eggebert Wolfgang Bronner Michael Schlechtweg Oliver Ambacher Manfred Thumm |
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Affiliation: | 1. Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastr. 72, 79108, Freiburg, Germany 2. Institut Für Hochfrequenztechnik und Elektronik (IHE), Universit?t Karlsruhe (TH), Kaiserstr. 12, 76128, Karlsruhe, Germany
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Abstract: | The design, realization and characterization of dual-stage X-band high-power and highly-efficient monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) is presented. These high power amplifiers (HPAs) are based on a precise investigation of circuit-relevant HEMT behavior using two different field-plate variants and its effects on PA performance as well as optimization of HPA driver stage size which also has a deep impact on the entire HPA. Two broadband (3 GHz) MMICs with different field-plate variants and two narrowband (1 GHz) PAs with different driver- to final-stage gate-width ratio are realized with a maximum output power of 19-23 W, a maximum power-added efficiency (PAE) of ≥40%, and an associated power gain of 17 dB at X-band. Furthermore, two 1 mm test transistors of the same technology with the mentioned field-plate variants and a 1 mm test MMIC support VSWR-ratio tests of 6:1 and 4:1, respectively. |
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