| 类金刚石碳膜的制备工艺 |
| |
| 引用本文： | 程宇航 吴一平. 类金刚石碳膜的制备工艺[J]. 功能材料, 1998, 29(1): 54-57 |
| |
| 作者姓名： | 程宇航 吴一平 |
| |
| 作者单位： | 华中理工大学材料科学与工程系!武汉，430074，华中理工大学材料科学与工程系!武汉，430074，华中理工大学材料科学与工程系!武汉，430074，华中理工大学材料科学与工程系!武汉，430074，华中理工大学材料科学与工程系!武汉，430074 |
| |
| 基金项目： | 华中理工大学塑性成型模拟及模具技术国家重点实验室资助 |
| |
| 摘 要： | 用射频－直流等离子体化学气相沉积法制备出类金刚石膜，用多因素和单因素正交试验设计方法对类金刚石的沉积工艺进行了研究，结果表明，极板偏压、真空度和气体成分是影响膜沉积速率的主要因素。沉积速率与ＰＶ成正比，且随反应气体深度单调增加，但当Ｃ２Ｈ２浓度低于１０％时，几乎不能成膜。
|
| 关 键 词： | 类金刚石碳膜 正交设计 制备工艺 薄膜 MPCVD |
Deposition Process of Diamond Like Carbon Films |
| |
| Cheng Yuhang Wu Yiping Chen Jianguo Qiao Xueliang Xie Changsheng. Deposition Process of Diamond Like Carbon Films[J]. Journal of Functional Materials, 1998, 29(1): 54-57 |
| |
| Authors: | Cheng Yuhang Wu Yiping Chen Jianguo Qiao Xueliang Xie Changsheng |
| |
| Abstract: | In this paper,it was introduced that diamond like carbon films were prepared by d c r f plasma enhanced chemical vapor deposition method. The deposition processes was analyzed by the Taguchi matric method (TMM). The results showed the main factors which affected the deposition rate were substrate bias, degree of vacuum and precursor gas composition, etc. Deposition rate was proportional to PV,and increased with C 2H 2 concentration .But diamond like carbond films couldn't be prepared while C 2H 2 concentration was lower than 10%. |
| |
| Keywords: | diamond like carbon film Taguchi matric method deposition process |
| 本文献已被 CNKI 维普 等数据库收录！ |
