成型工艺对高介薄型单层陶瓷电容器电阻性能影响

采用流延和轧膜成型两种工艺制作了尺寸为38.1mm×38.1mm×0.15mm，介电常数为25000左右的单层微波电容用陶瓷介质基片。系统对比了两种不同成型工艺对该基片的显微结构和电阻性能的影响规律。实验结果表明．轧膜成型制备出的电容器样品的绝缘电阻偏压特性和温度特性均优于流延成型工艺制得的样品，而且在各个温度下的介电损耗低于流延成型工艺制得的样品。不同的陶瓷基片表面扫描电镜图显示，流延成型的陶瓷介质表面粗糙多孔，而轧膜成型的陶瓷介质表面致密紧实。

Influences of Forming Processon the Resistance Characteristics of Thin Single-Layer Ceramic Capacitors with High Permittivity

Single-layer microwave ceramic capacitor dielectric substrate with size of 38.1 mm X 38.1 mm N0.15 mm and permittivity of 25000 was prepared by two different kinds of forming process including tape-casting forming process and roll forming process. The effect of two different kinds of forming process on the microstructure and resistance properties of ceramiccapacitor was systematically comparative studied. The experimental results show that the insulation resistance bias characteristics and temperature character- istics of the capacitor samples prepared by roll forming process are better than that prepared by tape-cast- ing forming process. The dielectric loss in each temperature is less than that of the capacitor samples pre- pared by tape-casting forming process as well. The SEM images of the surface of the different ceramic sub- strates show that the surface of the ceramic substrate samples prepared by the tape-casting forming process was rough and porous. On the contrary, the surface of the ceramic substrate samples prepared by roll forming process was flat and compact.