Growth and characterization of V2O5 thin film on conductive electrode |
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| Authors: | GENENE T MOLA ELHADI A A ARBAB BIDINI A TALEATU K KAVIYARASU ISHAQ AHMAD M MAAZA |
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| Affiliation: | 1. School of Chemistry & Physics, University of KwaZulu‐Natal, Pietermaritzburg Campus, Scottsville, South Africa;2. Department of Physics & Engineering Physics, Obafemi Awolowo University, Ile‐Ife, Nigeria;3. UNESCO‐UNISA Africa Chair in Nanosciences/Nanotechnology Laboratories, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, Pretoria, South Africa;4. Nanosciences African network (NANOAFNET), Materials Research Group (MRG), iThemba LABS‐National Research Foundation (NRF), 1 Old Faure Road, Cape Province, South Africa;5. National Center for Physics, Quaid‐i‐Azam University, Islamabad, Pakistan |
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| Abstract: | Vanadium pentoxide V2O5 thin films were grown at room temperature on ITO coated glass substrates by electrochemical deposition. The resulting films were annealed at 300, 400 and 500°C for 1 h in ambient environment. The effect of heat treatment on the films properties such as surface morphology, crystal structure, optical absorption and photoluminescence were investigated. The x‐ray diffraction study showed that the films are well crystallized with temperatures. Strong reflection from plane (400) indicated the film's preferred growth orientation. The V2O5 films are found to be highly transparent across the visible spectrum and the measured photoluminescence quenching suggested the film's potential application in OPV device fabrication. |
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| Keywords: | Electrochemical deposition optical band gap PL V2O5 thin films |
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