Ion implantation damage recovery in GaN |
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Authors: | I.O. Usov D. Koleske K.E. Sickafus |
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Affiliation: | aLos Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;bSandia National Laboratories, Albuquerque, New Mexico 87185, USA |
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Abstract: | We present a method of ion implantation doping of GaN, which permits reduced residual damage. The method consists of performing implantation in several steps with annealing between each step. Residual damage was analyzed by RBS/channeling and compared to a traditional implantation and annealing procedure. Better lattice recovery is clearly achieved using the alternating implantation and annealing approach. We attribute the efficient recovery to smaller damage amounts introduced during each implantation step, as well as to suppression of secondary defect formation. |
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Keywords: | Ion implantation Gallium nitride Damage annealing |
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