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Tunneling between two quantum wells: In0.53Ga0.47As/InP versus GaAs/Al0.35Ga0.65As |
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| Authors: | M.G.W. Alexander, M. Nido, W.W. Rü hle, R. Sauer, K. Ploog, K. K hler,W.T. Tsang |
| Affiliation: | a Max-Planck-Institut für Festkörperforschung, D7000, Stuttgart 80, West Germany b Physikalisches Institut, Universität Stuttgart, D7000, Stuttgart 80, West Germany c Fraunhofer-Institut für angewandte Festkörperphysik, D7800, Freiburg, West Germany d AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA |
| Abstract: | The electron transfer from a narrow to a wide quantum well through a thin barrier is studied in the non-resonant case by time-resolved photoluminescence. The two systems In0.53Ga0.47As/InP and GaAs/Al0.35Ga0.65As are compared. Space charge effects are investigated and discussed. Contributions of holes to the tunneling process are determined. |
| Keywords: | Tunneling charge carrier lifetime III–V semiconductor-to-semiconductor contacts time-resolved optical spectroscopy In0.53Ga0.47As/InP GaAs/Al0.35Ga0.65As |
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