| 直流磁控溅射ZnO薄膜的结构特性 |
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| 引用本文： | 贺洪波,范正修.直流磁控溅射ZnO薄膜的结构特性[J].光电子技术,1999,19(1):41-46. |
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| 作者姓名： | 贺洪波 范正修 |
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| 作者单位： | 中国科学院上海光学精密机械研究所薄膜技术中心!上海201800 |
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| 摘 要： | 通过改变工作气压、溅射电流、氩氧比等工艺参数，较为系统地探索了用反应式直流磁控溅射法制备ＺｎＯ薄膜的工艺条件，并采用ＸＲＤ和ＡＥＳ对这些薄膜的结构特性进行测试分析，成功地得到了具有ｃ轴择优取向、结晶度高的ＺｎＯ薄膜。
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| 关 键 词： | 直流磁控溅射 ZnO薄膜 结构特性 工艺参数 |
Structural Properties of ZnO Thin Films Deposited by DC Magnetron Sputtering |
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| He Hongbo Fan Zhengxiu.Structural Properties of ZnO Thin Films Deposited by DC Magnetron Sputtering[J].Optoelectronic Technology,1999,19(1):41-46. |
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| Authors: | He Hongbo Fan Zhengxiu |
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| Abstract: | The structural properties of ZnO thin films, deposited by reactive dc magnetron sputtering, were studied as a function of deposition parameters such as total pressure, sputtering current and Ar/O2 proportion. The structural properties of these films were analyzed using X-ray diffraction (XRD) and Auger electron spectrum (AES). ZnO thin films were successfully obtained to have a very strong preferred orientation along the c axis normal to the substrate surface and to have high crystallinity. |
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| Keywords: | dc magnetron sputtering ZnO thin films structural properties deposition parameters |
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