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Status and Trends in Advanced SOI Devices and Materials |
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| Authors: | Balestra Francis |
| Affiliation: | State Key Laboratory of Magnetism & State Key Laboratory of Superconductors,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China;State Key Laboratory of Magnetism & State Key Laboratory of Superconductors,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China;State Key Laboratory of Magnetism & State Key Laboratory of Superconductors,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China;State Key Laboratory of Magnetism & State Key Laboratory of Superconductors,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China;Department of Physics,Trinity College,Dublin 2,Ireland;Department of Physics,Trinity College,Dublin 2,Ireland;Department of Physics,Trinity College,Dublin 2,Ireland;Department of Physics,Trinity College,Dublin 2,Ireland |
| Abstract: | A review of recently explored effects in advanced SOI devices and materials is given. The effects of key device parameters on the electrical and thermal floating body effects are shown for various device architectures.Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. New hot carrier phenomena are discussed. The effects of gate misalignment or underlap,as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined. |
| Keywords: | SOI MOSFETs strain effects multi-gate devices new memories Materials SOI Devices Advanced Trends back charge storage DRAM gate hot carrier phenomena SiGe MOSFETs performance physical mechanisms Recent advances understanding sensitivity electron hole |
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