Indium-doped ZnO nanowires with infrequent growth orientation,rough surfaces and low-density surface traps |
| |
Authors: | Hongfeng Duan Haiping He Luwei Sun Shiyan Song Zhizhen Ye |
| |
Affiliation: | 1.Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, People''s Republic of China |
| |
Abstract: | Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from 100] to infrequent 023] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B. |
| |
Keywords: | In-doped ZnO nanowires Infrequent [02 2_3] growth orientation" target="_blank">org/1998/Math/MathML" id="M3" name="1556-276X-8-493-i1" overflow="scroll">2_3] growth orientation Large surface-to-volume ratio Low density of surface traps |
|
|