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Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them |
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| Authors: | Salii R A Mintairov S A Nadtochiy A M Nevedomskii V N Shvarts M Z Kalyuzhnyy N A |
| Affiliation: | 1.Ioffe Institute, 194021, St. Petersburg, Russia ;2.St. Petersburg Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - InAs and In0.8Ga0.2As quantum dots in a GaAs matrix as well as GaAs solar cells with quantum dots of both types in the i-region are obtained by metalorganic vapor-phase epitaxy. As... |
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